![](https://worldelectronics.co/img_data/155364_261MKT-TO3PN03A3.jpg)
FGA50T65SHD
product_info | Discrete Semiconductor Products onsemi FGA50T65SHD |
---|---|
Category | Discrete Semiconductor Products |
Manufacturer | onsemi |
Series | - |
Product Status | Last Time Buy |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650 V |
Current - Collector Pulsed (Icm) | 150 A |
Power - Max | 319 W |
Switching Energy | 1.28mJ (on), 384µJ (off) |
Input Type | Standard |
Gate Charge | 87 nC |
Td (on/off) @ 25°C | 22.4ns/73.6ns |
Test Condition | 400V, 50A, 6Ohm, 15V |
Reverse Recovery Time (trr) | 34.6 ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Supplier Device Package | TO-3PN |
Base Product Number | FGA50T65 |
Datasheets | FGA50T65SHD |
Featured Product | 650 V, 30A/40A/60A, Field Stop Trench, FS3 IGBT for Optimum Performance |
PCN Obsolescence/ EOL | Mult Dev EOL 30/Jun/2022 |
PCN Assembly/Origin | Mold compound change 17/Sep/2019 |
PCN Packaging | Mult Devices 24/Oct/2017 |
HTML Datasheet | FGA50T65SHD |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | Not Applicable |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |