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APT25GP90BG
product_info | Discrete Semiconductor Products Microchip Technology APT25GP90BG |
---|---|
Category | Discrete Semiconductor Products |
Manufacturer | Microchip Technology |
Series | POWER MOS 7® |
Product Status | Active |
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 900 V |
Current - Collector Pulsed (Icm) | 110 A |
Power - Max | 417 W |
Switching Energy | 370µJ (off) |
Input Type | Standard |
Gate Charge | 110 nC |
Td (on/off) @ 25°C | 13ns/55ns |
Test Condition | 600V, 25A, 5Ohm, 15V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 [B] |
Base Product Number | APT25GP90 |
Datasheets | APT25GP90B |
HTML Datasheet | APT25GP90B |
RoHS Status | RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |