Image shown is for reference only. Detailed specifications should be obtained from the data sheet.
AFGY100T65SPD
| product_info | Discrete Semiconductor Products onsemi AFGY100T65SPD |
|---|---|
| Category | Discrete Semiconductor Products |
| Manufacturer | onsemi |
| Series | Automotive, AEC-Q101 |
| Product Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 660 W |
| Switching Energy | 5.1mJ (on), 2.7mJ (off) |
| Input Type | Standard |
| Gate Charge | 109 nC |
| Td (on/off) @ 25°C | 36ns/78ns |
| Test Condition | 400V, 100A, 5Ohm, 15V |
| Reverse Recovery Time (trr) | 105 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Base Product Number | AFGY100 |
| Datasheets | AFGY100T65SPD |
| PCN Assembly/Origin | Mult Dev A/T Spec 17/Jun/2021 |
| PCN Packaging | Packing quantity increase 25/Jun/2021 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
