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2SK3564(STA4,Q,M)
| product_info | Discrete Semiconductor Products Toshiba Semiconductor and Storage 2SK3564(STA4,Q,M) |
|---|---|
| Category | Discrete Semiconductor Products |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | π-MOSIV |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.3Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220SIS |
| Package / Case | TO-220-3 Full Pack |
| Base Product Number | 2SK3564 |
| Featured Product | Server Solutions |
| HTML Datasheet | Mosfets Prod Guide |
| EDA Models | 2SK3564(STA4,Q,M) by Ultra Librarian |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
