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2N7002PW,115
product_info | Discrete Semiconductor Products Nexperia USA Inc. 2N7002PW,115 |
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Category | Discrete Semiconductor Products |
Manufacturer | Nexperia USA Inc. |
Series | Automotive, AEC-Q100 |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 310mA (Ta) |
Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.8 nC @ 4.5 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 260mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-323 |
Package / Case | SC-70, SOT-323 |
Base Product Number | 2N7002 |
PCN Assembly/Origin | Mult Dev BondWire Material chg 2/Sep/2017 |
EDA Models | 2N7002PW,115 by SnapEDA |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.21.0095 |