Image shown is for reference only. Detailed specifications should be obtained from the data sheet.
2N7002NXAKR
product_info | Discrete Semiconductor Products Nexperia USA Inc. 2N7002NXAKR |
---|---|
Category | Discrete Semiconductor Products |
Manufacturer | Nexperia USA Inc. |
Series | - |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 190mA (Ta), 300mA (Tc) |
Rds On (Max) @ Id, Vgs | 4.5Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.43 nC @ 4.5 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 20 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 265mW (Ta), 1.33W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236AB |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Base Product Number | 2N7002 |
Datasheets | 2N7002NXAK |
PCN Packaging | All Dev Label Chgs 2/Aug/2020 |
HTML Datasheet | 2N7002NXAK |
EDA Models | 2N7002NXAKR by SnapEDA |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |