Image shown is for reference only. Detailed specifications should be obtained from the data sheet.
2N7002H6327XTSA2
| product_info | Discrete Semiconductor Products Infineon Technologies 2N7002H6327XTSA2 |
|---|---|
| Category | Discrete Semiconductor Products |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 20 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT23 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | 2N7002 |
| Datasheets | 2N7002 |
| Other Related Documents | Part Number Guide |
| HTML Datasheet | 2N7002 |
| Simulation Models | MOSFET OptiMOS™ 60V N-Channel Spice Model |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
