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2ED2101S06FXUMA1
product_info | Integrated Circuits (ICs) Infineon Technologies 2ED2101S06FXUMA1 |
---|---|
Category | Integrated Circuits (ICs) |
Manufacturer | Infineon Technologies |
Series | - |
Product Status | Active |
Driven Configuration | High-Side and Low-Side |
Channel Type | Independent |
Gate Type | IGBT, N-Channel MOSFET |
Logic Voltage - VIL, VIH | 1.1V, 1.7V |
Current - Peak Output (Source, Sink) | 290mA, 700mA |
Input Type | Non-Inverting |
High Side Voltage - Max (Bootstrap) | 650 V |
Rise / Fall Time (Typ) | 70ns, 35ns |
Operating Temperature | -40°C ~ 125°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | PG-DSO-8-69 |
Datasheets | 2ED2101S06F |
HTML Datasheet | 2ED2101S06F |
EDA Models | 2ED2101S06FXUMA1 by Ultra Librarian |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8542.39.0001 |